Vladimir Polezhaev

Portrait of Vladimir Polezhaev, power electronics engineer specializing in semiconductor embedding and current sensor development
© M-SHUNT

Engineering Precision for Next-Generation Power Electronics.

Specialist in power semiconductor embedding, advanced fabrication processes, and high-performance current sensor development. With nearly a decade of engineering experience, he combines technical depth with a strong focus on quality, efficiency, and manufacturing excellence.

About

With close to ten years of hands-on experience in the field of power semiconductor embedding, I am dedicated to pushing the boundaries of modern power electronics. My work spans the complete process chain—from fabrication technologies and process optimization to the development of high-accuracy current sensors for demanding applications.

Driven by a passion for precision and technological innovation, I strive to create solutions that enhance the performance, reliability, and manufacturability of next-generation power electronics.

In my current role within a high-tech startup, I am responsible for:

  • Quality assurance
  • Process optimization
  • Evaluation of fabrication workflows
  • Implementation of robust engineering standards
  • Continuous improvement strategies in semiconductor processing

My mission: to build the technical foundations that enable efficient, scalable, and future-ready power electronic systems.

Knowledge

Power Semiconductor Embedding

  • Development and optimization of embedding technologies
  • Material selection and interface engineering
  • Reliability-driven process design

Fabrication Process Development

  • End-to-end fabrication workflows
  • Process stabilization & repeatability
  • Identification and elimination of bottlenecks

Quality Assurance in Power Electronics

  • Inspection strategies & defect analysis
  • Root cause analysis and corrective actions
  • Statistical process control (SPC)

High-Performance Current Sensor Development

  • Sensor architecture & layout concepts
  • Optimization for accuracy, bandwidth, and thermal stability
  • Integration into advanced power electronic systems

Continuous Improvement & Industrialization

  • Lean process strategies
  • Scalability planning for manufacturing
  • Cross-functional engineering collaboration

Professional Experience

Scientific Assistant
University of Applied Sciences Kempten · Full-time
Nov 2017 – Oct 2025 · 8 years

  • PCB design and fabrication
  • Semiconductor embedding and characterization (Si, SiC, GaN)
  • Development and testing of power electronic modules
  • Support for research and laboratory activities in electronics integration

Test Engineer
NAVIgard · Full-time
Apr 2016 – Sept 2016 · 6 months

  • Testing and evaluation of security and access control systems
  • Functional verification of CCTV and electronic security components
  • Performance analysis and troubleshooting within R&D workflows

Education

Master of Engineering (MEng), Electrical Engineering
University of Applied Sciences Kempten
Oct 2016 – July 2018

  • Final grade: 1.9
  • Activities: Electronics Integration Laboratory (EI-Lab), International Club

Certificate of Exchange Studies – Engineering Physics / Applied Physics
University of Łódź
Oct 2015 – Feb 2016

  • GPA: 92%
  • Activities: International Club
  • Coursework included: Nanoelectronics, Microprocessors Systems, Modern Physics Methods, Semiconductor Fundamentals, Experimental Techniques

Team

Latest M-SHUNT related Publications

  • Characterising Wide Bandgap Power Modules: Validating the M-Shunt Concept for High-Power Applications in the Kiloampere Range

    H. Lutzen, J. Müller, V. Polezhaev, S. Chemnitz, M. Arndt, L. Dittmer, T. Huesgen and N. Kaminski

    in PCIM Europe 2024 – International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany

  • A Review of Current Sensors in Power Electronics: Fundamentals, Measurement Techniques and Components to Measure the Fast Transients of Wide Bandgap Devices

    H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski

    in EPE’23 ECCE Europe – 25th European Conference on Power Electronics and Applications, Aalborg, Denmark

  • Reducing the Impact of Skin Effect Induced Measurement Errors in M-Shunts by Deliberate Field Coupling

    H. Lutzen, J. Müller, V. Polezhaev, T. Huesgen and N. Kaminski

    in EPE’22 ECCE Europe – 24th European Conference on Power Electronics and Applications, Hanover, Germany

  • Temperature Compensated M-Shunts for Fast Transient and Low Inductive Current Measurements

    H. Lutzen, V. Polezhaev, K. B. Rawal, K. Ahmmed, T. Huesgen and N. Kaminski

    in CIPS 2022 – 12th International Conference on Integrated Power Electronics Systems, Berlin, Germany